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Metallization of the single component molecular semiconductor [Ni(ptdt)2] under very high pressure
Hengbo Cui1, James S Brooks, Akiko Kobayashi
1Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee Florida 32310, USA.
Abstract:
The four-probe electrical resistivity measurements on a single-component molecular semiconductor [Ni(ptdt)(2)] (Ni(S(8)C(9)H(6))(2)) was performed up to 20.7 GPa by using a diamond anvil cell. A newly improved method was employed to reduce the effect of uniaxial pressure. The semiconducting behavior persisted up to 17.9 GPa. The pressure-induced metallization began to appear at 18.9 GPa, and the complete metallic behavior down to 1 K was observed at 19.9 GPa.
