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Charge transport in semiconductors with multiscale conformational dynamics
Alessandro Troisi1, David L Cheung, Denis Andrienko
1Department of Chemistry and Centre of Scientific Computing, University of Warwick, Coventry, CV4 7AL, United Kingdom.
Charge transport in organic semiconductors requires advanced models when nuclear and carrier dynamics are intertwined. This study presents a new Hamiltonian model to accurately simulate charge transport, accounting for both slow and fast nuclear motions.
Area of Science:
- Organic electronics
- Materials science
- Condensed matter physics
Background:
- Charge transport in organic semiconductors is complex, influenced by nuclear motion dynamics.
- Traditional models (static disorder, averaged Hamiltonians) fail when nuclear and charge dynamics are coupled.
Purpose of the Study:
- To develop a novel model Hamiltonian for simulating charge transport in organic semiconductors.
- To accurately describe charge transport when carrier and nuclear dynamics are inseparable.
Main Methods:
- Developed a model Hamiltonian incorporating Langevin oscillators to represent nuclear modes.
- Performed molecular dynamics simulations (nanoseconds) on discotic liquid crystal mesophases.
- Evaluated electronic couplings to derive realistic Hamiltonian parameters.
Main Results:
- Identified a limited set of Langevin oscillators sufficient to describe electron-coupled nuclear modes.
- The model Hamiltonian accurately captures charge transport dynamics.
- Successfully simulated systems with both slow (ns) and fast (fs) nuclear motions.
Conclusions:
- The developed model Hamiltonian provides a robust framework for studying charge transport in organic semiconductors.
- This approach bridges the gap between dynamic and static disorder models.
- Applicable to a wide range of organic electronic materials and conditions.
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