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Related Experiment Video

Updated: Jun 23, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

Linwei Yu1, Pierre-Jean Alet, Gennaro Picardi

  • 1Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.

Physical Review Letters
|April 28, 2009
PubMed
Summary
This summary is machine-generated.

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This study introduces an in-plane solid-liquid-solid (IPSLS) method for growing long, thin silicon nanowires (SiNWs) without reactive gases. The process utilizes liquid indium to transform amorphous silicon into crystalline SiNWs with high growth rates.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Silicon nanowires (SiNWs) are crucial for next-generation electronics.
  • Existing synthesis methods often require reactive gases and precise control.
  • Developing efficient, gas-free fabrication techniques for SiNWs is a key challenge.

Purpose of the Study:

  • To report a novel in-plane solid-liquid-solid (IPSLS) growth mode for silicon nanowires.
  • To demonstrate a reacting-gas-free annealing process for SiNW synthesis.
  • To investigate the growth dynamics and characteristics of SiNWs produced by this method.

Main Methods:

  • Utilizing liquid indium droplets to guide nanowire growth.
  • Employing an annealing process in a reacting-gas-free environment.

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  • Real-time in situ scanning electron microscopy (SEM) for observation.

    • Main Results:

    • Achieved self-avoiding lateral silicon nanowires (SiNWs) with lengths up to millimeters and diameters as small as 22 nm.
    • Observed a high growth rate exceeding 10(2) nm/s.
    • Revealed rich evolution dynamics during the IPSLS growth process.

    Conclusions:

    • The IPSLS mode offers an effective gas-free route for synthesizing high-quality SiNWs.
    • The findings provide insights into the mechanisms governing nanowire formation.
    • This method holds potential for scalable fabrication of silicon nanostructures.