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Updated: Jun 23, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Quantum criticality perspective on the charging of narrow quantum-dot levels
V Kashcheyevs1, C Karrasch, T Hecht
1Faculty of Physics and Mathematics, University of Latvia, Zeļļu street 8, Riga LV-1002, Latvia.
Abstract:
Understanding the charging of exceptionally narrow levels in quantum dots in the presence of interactions remains a challenge within mesoscopic physics. We address this fundamental question in the generic model of a narrow level capacitively coupled to a broad one. Using bosonization we show that for arbitrary capacitive coupling charging can be described by an analogy to the magnetization in the anisotropic Kondo model, featuring a low-energy crossover scale that depends in a power-law fashion on the tunneling amplitude to the level. Explicit analytical expressions for the exponent are derived and confirmed by detailed numerical and functional renormalization-group calculations.
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