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Updated: Jun 23, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides
1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
Abstract:
The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (PZT). In the electron-only regime of the FLG, mu reaches 7x10(4) cm(2)/V s at 300 K for n=2.4x10(12)/cm(2), 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10(5) cm(2)/V s at low temperature. The temperature-dependent resistivity rho(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8+/-0.5 eV.
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