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Updated: Jun 23, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
B Eble1, C Testelin, P Desfonds
1Université Pierre et Marie Curie-Paris6, UMR 7588, INSP, Paris, F-75015 France.
We studied spin dynamics in InAs/GaAs quantum dots, finding evidence of hyperfine interaction between hole and nuclear spins. This interaction explains the observed hole-spin dephasing time in these semiconductor nanostructures.
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