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Quantum Goos-Hänchen effect in graphene.
C W J Beenakker1, R A Sepkhanov, A R Akhmerov
1Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands.
Physical Review Letters
|April 28, 2009
Summary
The Goos-Hänchen effect in graphene
Area of Science:
- Physics
- Condensed Matter Physics
- Materials Science
Background:
- The Goos-Hänchen (GH) effect describes the spatial shift of a reflected light beam at an interface during total internal reflection.
- Graphene, a 2D material, exhibits unique electronic properties due to its massless Dirac fermions.
Purpose of the Study:
- To investigate the Goos-Hänchen effect at a p-n interface in graphene.
- To explore the influence of pseudospin on the GH effect in graphene.
- To analyze the impact of the GH effect on the electronic properties of graphene.
Main Methods:
- Theoretical analysis of the Goos-Hänchen effect at a graphene p-n junction.
- Investigation of the role of pseudospin (sublattice) in the GH effect.
- Calculation of the reflected beam shift (sigma) and its dependence on the angle of incidence (alpha).
Main Results:
- The GH effect in graphene is shown to depend on the pseudospin degree of freedom of Dirac fermions.
- A sign change in the GH shift (sigma) is observed at a critical angle of incidence (alpha_c).
- The GH effect doubles the degeneracy of the lowest propagating mode in doped graphene channels.
Conclusions:
- The pseudospin-dependent Goos-Hänchen effect offers new insights into light-matter interactions in graphene.
- The observed sign change and degeneracy doubling have implications for optical and electronic device applications.
- Stepwise increases in conductance with channel width, related to the GH effect, can be experimentally observed.
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