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Related Experiment Video

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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Quantum Goos-Hänchen effect in graphene.

C W J Beenakker¹, R A Sepkhanov, A R Akhmerov

¹Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands.

Physical Review Letters

|April 28, 2009

Summary

The Goos-Hänchen effect in graphene

Area of Science:

Physics
Condensed Matter Physics
Materials Science

Background:

The Goos-Hänchen (GH) effect describes the spatial shift of a reflected light beam at an interface during total internal reflection.
Graphene, a 2D material, exhibits unique electronic properties due to its massless Dirac fermions.

Purpose of the Study:

To investigate the Goos-Hänchen effect at a p-n interface in graphene.
To explore the influence of pseudospin on the GH effect in graphene.
To analyze the impact of the GH effect on the electronic properties of graphene.

Main Methods:

Theoretical analysis of the Goos-Hänchen effect at a graphene p-n junction.
Investigation of the role of pseudospin (sublattice) in the GH effect.
Calculation of the reflected beam shift (sigma) and its dependence on the angle of incidence (alpha).

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Main Results:

The GH effect in graphene is shown to depend on the pseudospin degree of freedom of Dirac fermions.
A sign change in the GH shift (sigma) is observed at a critical angle of incidence (alpha_c).
The GH effect doubles the degeneracy of the lowest propagating mode in doped graphene channels.

Conclusions:

The pseudospin-dependent Goos-Hänchen effect offers new insights into light-matter interactions in graphene.
The observed sign change and degeneracy doubling have implications for optical and electronic device applications.
Stepwise increases in conductance with channel width, related to the GH effect, can be experimentally observed.