High performance laser diode bars with aluminum-free active regions
Optics Express
|April 28, 2009
Summary
High-power semiconductor laser bars with aluminum-free active regions demonstrate reliable operation. These bars achieve 40 W continuous wave (CW) power and record 115 W CW power, showcasing excellent efficiency and beam quality.
Area of Science:
- Semiconductor diode lasers
- Optoelectronics
- Materials science
Background:
- Aluminum-free active regions are crucial for high-power semiconductor lasers.
- Reliable operation and performance data are essential for device development.
Purpose of the Study:
- To present operating and lifetest data for 795 and 808 nm laser bars.
- To evaluate the performance of conductively cooled and microchannel-cooled laser bars.
- To review quasi-continuous wave (QCW) performance and lifetime.
Main Methods:
- Testing of 795 and 808 nm laser bars with aluminum-free active regions.
- Characterization of continuous wave (CW) power output, efficiency, beam divergence, and spectra.
- Lifetest experiments under various cooling conditions (conductive and microchannel).
- Review of quasi-continuous wave (QCW) performance for higher fill-factor bars.
Main Results:
- Conductively cooled bars reliably operate at 40 W CW with high efficiency, low divergence, and narrow spectra.
- Record CW power of 115 W demonstrated at 795 nm for 30% fill-factor bars on microchannel coolers.
- Data on QCW performance and lifetime for higher fill-factor bars are presented.
Conclusions:
- Aluminum-free active region laser bars offer robust performance and high power capabilities.
- Microchannel cooling enables record CW power outputs for these laser bars.
- The data supports the use of these laser bars in demanding applications.
