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Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

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Published on: April 28, 2016

Spectroscopy of shallow InAs/InP quantum wire nanostructures.

Yu I Mazur¹, V G Dorogan, O Bierwagen

¹Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA. ymazur@uark.edu

|May 7, 2009

Summary

Investigating indium arsenide/indium phosphide (InAs/InP) quantum structures reveals unusual optical property changes with temperature. These findings suggest a thermal shift in dimensionality, impacting their electronic behavior.

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Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Quantum wells and quantum wires are crucial nanostructures for optoelectronic applications.
Understanding their optical properties is essential for device design and performance optimization.
Indium arsenide/indium phosphide (InAs/InP) systems offer unique electronic and optical characteristics.

Purpose of the Study:

To comprehensively investigate the optical properties of InAs/InP(001) quantum wires (QWrs) and their parent quantum well system.
To analyze the temperature-dependent behavior of excitonic transitions in these nanostructures.
To explore the influence of temperature on the dimensionality and polarization anisotropy of the optical response.

Main Methods:

Temperature-dependent photoluminescence (PL) spectroscopy.
Fourier transform infrared spectroscopy.
Polarized absorbance measurements.

Main Results:

Observed unusual two-branch switching in excitonic photoluminescence band maxima with temperature.
Demonstrated thermally induced changes in optical absorbance line shape, indicating a dimensionality shift from 1D to anisotropic 2D in quantum wires.
Detected a significant reduction or disappearance of polarization anisotropy in heavy-hole and light-hole to electron transitions at room temperature.

Conclusions:

The observed optical phenomena are attributed to the thermal activation of excitonic ground states.
Temperature plays a critical role in altering the effective dimensionality of InAs/InP nanostructures.
These findings provide insights into the fundamental physics of low-dimensional semiconductor systems and their potential for tunable optoelectronic devices.