MOSFET: Enhancement Mode
MOSFET
Semiconductors
MOS Capacitor
Non-ohmic Devices
Electro-mechanical Systems
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Updated: Jun 23, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Kraków, Poland.
We propose a novel nanodevice capable of performing essential quantum single qubit gates on electron spins. This design utilizes Dresselhaus spin-orbit coupling for precise spin manipulation in semiconductor heterostructures.
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