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Published on: August 2, 2019
Carrier transport mechanisms of bistable memory devices fabricated utilizing core-shell CdSe/ZnSe
Fushan Li1, Dong Ick Son, Tae Whan Kim
1Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
Abstract:
Transmission electron microscopy images showed that conjugation between single core-shell CdSe/ZnSe quantum dots (QDs) and oxidized multi-walled carbon nanotubes (MWCNTs) was achieved through the complexation reaction. Current-voltage (I-V) measurements on Al/CdSe:MWCNT conjugated nanocomposite/indium-tin-oxide devices at 300 K showed that the on/off ratio of the current bistability was as large as about 10(4), which was significantly increased due to an enhancement of the carrier transfer efficiency between the CdSe/ZnSe QDs and the MWCNTs. Carrier transport mechanisms of the bistable memory devices fabricated utilizing CdSe/ZnSe QD/MWCNT hybrid nanocomposite are described on the basis of the I-V results.

