Jove
Visualize
Contact Us

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
Joule-Thomson Effect01:21

Joule-Thomson Effect

The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Theory of Metallic Conduction01:17

Theory of Metallic Conduction

The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Spatiotemporal trends of land surface temperature and surface urban heat island intensification across India.

Environmental monitoring and assessment·2026
Same author

Electronic characteristics of BRCA1 mutations in DNA.

Biopolymers·2021
Same author

Effect of cytosine hydroxymethylation on DNA charge transport.

Molecular and cellular biochemistry·2021
Same author

Implications of a conserved region of bluetongue virus protein VP2 in cross-neutralisation of bluetongue virus serotypes.

The Onderstepoort journal of veterinary research·2020
Same author

Predictors for severe hemorrhage requiring angioembolization post percutaneous nephrolithotomy: A single-center experience over 3 years.

Urology annals·2019
Same author

Infection kinetics and antibody responses in Deccani sheep during experimental infection and superinfection with bluetongue virus serotypes 4 and 16.

Veterinary world·2019
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 23, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Thermoelectromechanical effects in quantum dots.

Sunil R Patil1, Roderick V N Melnik

  • 1M2NeT Laboratory, Wilfrid Laurier University, Waterloo, ON, Canada. spatil@wlu.ca

Nanotechnology
|May 8, 2009
PubMed
Summary
This summary is machine-generated.

This study quantifies thermoelectromechanical effects in quantum dots (QDs) using a coupled thermoelectroelasticity model. GaN/AlN QDs show greater sensitivity to thermal loads, impacting nanostructure performance.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Related Experiment Videos

Last Updated: Jun 23, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

Area of Science:

  • Solid State Physics
  • Materials Science
  • Nanotechnology

Background:

  • Semiconductor nanostructures exhibit important electromechanical effects due to their piezoelectric nature.
  • Thermal management is a critical challenge for nanostructures in electronic and optoelectronic devices.
  • Low-dimensional nanostructures like quantum dots (QDs) require careful consideration of these effects.

Purpose of the Study:

  • To investigate thermoelectromechanical effects in quantum dots (QDs).
  • To quantify the influence of these effects on the bandstructure of low-dimensional nanostructures.
  • To analyze the impact of thermal loadings on QD performance.

Main Methods:

  • Application of a coupled thermoelectroelasticity model to QDs.
  • Finite element solutions for various thermal loadings (internal and external).
  • Energy bandstructure calculations for different thermal conditions.

Main Results:

  • Quantified the influence of thermoelectromechanical effects on QD bandstructures.
  • Presented effects of thermal loadings on electromechanical properties and bandstructure.
  • Observed higher sensitivity to thermal loads in GaN/AlN QDs compared to CdSe/CdS QDs.
  • Accounted for wetting layer effects on electromechanical quantities.

Conclusions:

  • Thermo-electromechanical effects significantly influence the bandstructure and performance of QDs.
  • GaN/AlN QDs are more susceptible to thermal variations than CdSe/CdS QDs.
  • Understanding these effects is crucial for designing robust QD-based nanosystems.