Related Experiment Video
Updated: Jun 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Bipolar resistance switching characteristics in a thin Ti-Ni-O compound film
Joonhyuk Choi1, Jaehoon Song, Kyooho Jung
1Department of Semiconductor Science, Dongguk University, Seoul, Korea.
Abstract:
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
More Related Videos
Related Concept Videos
Bipolar Junction Transistor
The structure...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

