Related Experiment Video
Updated: Jun 23, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Synthetic haggite V(4)O(6)(OH)(4) nanobelts: oxyhydroxide as a new catalog of smart electrical switch materials
Changzheng Wu1, Jun Dai, Xiaodong Zhang
1Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Hefei, Anhui 230026, PR China.
Abstract:
Synthetic haggite V(4)O(6)(OH)(4) has been successfully obtained for the first time after a delay of more than 50 years. Our careful analysis clarifies the formula of haggite as V(4)O(6)(OH)(4), rather than the long-standing known V(4)O(4)(OH)(6). The semiconductor of haggite shows a rapid increase of resistance by >10(4) orders of magnitude down to low temperatures, giving the first case of the oxyhydroxide compound showing semiconductor-insulator transitions. More intriguingly, the haggite product's nanobelt that can act as connecting units have potential in the construction of intelligent switching devices in future investigations.
Related Concept Videos
Electrophilic 1,2- and 1,4-Addition of HX to 1,3-Butadiene
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Classification and Mechanical Properties of Synthetic Polymers
Electrophilic Addition of HX to 1,3-Butadiene: Thermodynamic vs Kinetic Control