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Updated: Jun 23, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Characterization of integrated photonic devices with minimum phase technique
R Halir1, I Molina-Fernández, J G Wangüemert-Pérez
1Departamento Ingeniería de Comunicaciones, ETSI Telecomunicación, Universidad de Málaga, 29071 Málaga, Spain. robert.halir@ic.uma.es
This study introduces a new method to accurately measure integrated optical devices by removing spurious reflections. The technique reconstructs device characteristics from transmission data, essential for high refractive index platforms like Silicon-on-Insulator (SOI).
Area of Science:
- Photonics and Optical Engineering
- Materials Science
Background:
- Spurious reflections, especially facet reflections in high refractive index platforms (Indium Phosphide (InP), Silicon-on-Insulator (SOI)), hinder accurate characterization of integrated optical devices.
- The absence of anti-reflective (AR) coatings exacerbates reflection issues in these platforms.
Purpose of the Study:
- To present a novel method for recovering original device characteristics from measured power transmission data affected by spurious reflections.
- To enable accurate experimental characterization of integrated optical devices without relying on AR coatings.
Main Methods:
- Utilizing minimum phase techniques to reconstruct time-domain information from measured power transmission.
- Filtering the reconstructed time-domain data to eliminate reflection artifacts.
- Providing a criterion to assess device suitability for the minimum phase technique.
Main Results:
- Successfully recovered original device characteristics by removing reflection artifacts.
- Validated the technique using simulated and experimental results for multi-mode interference couplers (MMICs) in SOI.
- Demonstrated the effectiveness of the method in the absence of anti-reflective coatings.
Conclusions:
- The proposed minimum phase technique effectively removes spurious reflection artifacts from optical device measurements.
- This method provides a viable solution for accurate characterization of integrated optical devices on high refractive index platforms without AR coatings.
- The technique is validated for MMICs in SOI, showing its practical applicability.
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