1.3-microm optically-pumped semiconductor disk laser by wafer fusion

Area of Science:

• Optics and Photonics
• Materials Science
• Semiconductor Lasers

Background:

• Optically-pumped semiconductor disk lasers (OP SDLs) are crucial for high-power laser generation.
• Existing fabrication methods for 1.3 micrometer OP SDLs face limitations in performance and integration.
• Wafer fusion presents a promising alternative for creating advanced semiconductor laser structures.

Purpose of the Study:

• To demonstrate a high-power optically-pumped semiconductor disk laser operating at 1.3 micrometers.
• To investigate the efficacy of wafer fusion for integrating dissimilar semiconductor materials in laser devices.
• To compare the performance of wafer-fused lasers against monolithically grown structures.

Main Methods:

• Wafer fusion of an Indium Phosphide (InP)-based active medium with a Gallium Arsenide/Aluminum Gallium Arsenide (GaAs/AlGaAs) distributed Bragg reflector (DBR).
• Fabrication of an integrated monolithic gain mirror structure.
• Characterization of laser output power and performance at a controlled temperature (15 degrees C).

Main Results:

• Achieved over 2.7 W of output power, a record for this class of lasers.
• Demonstrated successful integration of InP and GaAs/AlGaAs materials via wafer fusion.
• The wafer-fused approach yielded superior results compared to monolithically grown AlGaInAs/GaInAsP and GaInNAs structures.

Conclusions:

• Wafer fusion is a highly effective technique for fabricating high-power 1.3 micrometer optically-pumped semiconductor disk lasers.
• The integrated monolithic gain mirror design offers significant advantages in performance and scalability.
• This technology represents a key advancement for high-power semiconductor laser development.