Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements

We report on the structural and electrical characterization of individual Sn-doped In(2)O(3) nanowires. Key information on the nanowire's electron transport such as the carrier's mobility and density are presented. The mobility data was found to decrease as the temperature increases, providing direct evidence of the electron-phonon interaction as the dominant scattering mechanism in this oxide system. The results were confirmed by resistivity measurements and additionally the electron density could be directly calculated providing n = 5 x 10(24) cm(-3), confirming the samples' metallic character.