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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Basic structures for photonic integrated circuits in Silicon-on-insulator.

W Bogaerts, D Taillaert, B Luyssaert

    Optics Express
    |May 29, 2009
    PubMed
    Summary
    This summary is machine-generated.

    We developed a fabrication process for nanophotonic structures in Silicon-on-insulator (SOI) using CMOS techniques. Photonic wires show significantly lower propagation loss (0.24dB/mm) than photonic crystal waveguides (7.5dB/mm).

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    Area of Science:

    • Photonics and Nanotechnology
    • Integrated Optics
    • Semiconductor Device Fabrication

    Background:

    • Compact integration of photonic circuits requires wavelength-scale structures with high index contrast.
    • Silicon-on-insulator (SOI) is a key platform for integrated photonics due to its high refractive index contrast.

    Purpose of the Study:

    • To develop a fabrication process for nanophotonic structures in SOI using CMOS techniques.
    • To compare the propagation losses of photonic wires and photonic crystal waveguides fabricated with the same process.
    • To develop efficient fiber couplers and spot-size converters for integrated photonic circuits.

    Main Methods:

    • Utilized CMOS processing techniques, specifically deep UV lithography, for fabricating nanophotonic structures on SOI.
    • Fabricated and characterized photonic wires and photonic crystal waveguides.
    • Designed and fabricated vertical fiber couplers and integrated spot-size converters.

    Main Results:

    • Achieved significantly lower propagation loss for photonic wires (0.24 dB/mm) compared to photonic crystal waveguides (7.5 dB/mm) using the same fabrication method.
    • Demonstrated vertical fiber couplers with coupling efficiencies exceeding 21%.
    • Developed integrated compact spot-size converters with a mode-to-mode coupling efficiency greater than 70%.

    Conclusions:

    • Photonic wires offer a superior solution for low-loss waveguiding in integrated photonic circuits compared to photonic crystal waveguides when fabricated using standard CMOS processes.
    • The developed fabrication process enables efficient coupling to optical fibers and integration of compact spot-size converters, crucial for practical photonic circuit applications.