Related Experiment Video
Updated: Jun 22, 2026

07:44
Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Influence of nonlinear absorption on Raman amplification in Silicon waveguides
Optics Express
|May 29, 2009
Abstract:
We model the TPA-induced free carrier absorption effect in silicon Raman amplifiers and quantify the conditions under which net gain may be obtained. The achievable Raman gain strongly depends on the free carrier lifetime, propagation loss, and on the effective Raman gain coefficient, through pump-induced broadening.
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