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Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Published on: April 4, 2017

Solid-state carrier-envelope-phase noise measurements with intrinsically balanced detection.

Peter Roos, Xiaoqin Li, Jessica Pipis

    Optics Express
    |June 2, 2009
    PubMed
    Summary

    We developed a new semiconductor method to measure laser phase noise. This technique is simpler and more robust than existing methods for precise optical measurements.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Physics
    • Laser Technology

    Background:

    • Carrier-envelope-phase (CEP) noise is a critical parameter in ultrafast lasers.
    • Stabilized Ti:sapphire lasers are essential tools in scientific research.
    • Existing CEP noise measurement techniques can be complex and introduce noise.

    Purpose of the Study:

    • To develop a novel, robust, and simplified method for measuring out-of-loop carrier-envelope-phase noise.
    • To utilize interference between single- and two-photon photocurrent generation in semiconductors for phase noise measurement.
    • To assess the performance of this new technique against standard methods.

    Main Methods:

    • Employing interference between single- and two-photon photocurrent generation pathways within a semiconductor.
    • Utilizing a stabilized Ti:sapphire modelocked laser as the light source.
    • Implementing a built-in balanced detection mechanism for measurement.

    Main Results:

    • The semiconductor technique accurately measures out-of-loop carrier-envelope-phase noise.
    • The method demonstrates no significant amplitude/phase coupling.
    • No additional phase noise was introduced compared to standard self-referencing techniques.
    • The technique requires minimal optical components.

    Conclusions:

    • This solid-state measurement technique offers a simpler and more robust alternative for CEP noise characterization.
    • The built-in balanced detection is advantageous for direct-current (dc) carrier-envelope-phase measurements.
    • The method has potential for widespread application in ultrafast laser systems.