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Light emitting diode fault detection using p-n junction photovoltaic effect
Ping Li1, Yumei Wen, Youhai Cai
1College of Opto-electronic Engineering, The Key Laboratory for Opto-electronic Technology and Systems of Ministry of Education, Chongqing University, Chongqing 400044, People's Republic of China. liping@cqu.edu.cn
This study introduces a noncontact method for detecting faults in light-emitting diode (LED) chips before packaging using their photovoltaic effect. This technique identifies chip defects and bonding issues, offering an alternative to traditional contact methods.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Manufacturing Technology
Background:
- Current methods for light-emitting diode (LED) chip fault detection often rely on contact-based electroluminescence, which can be time-consuming and potentially damage the chips.
- Ensuring the quality of LED chips during the packaging process is critical for device performance and reliability.
- Identifying defects such as chip quality issues, contamination, and bonding deficiencies early is essential for reducing manufacturing costs.
Purpose of the Study:
- To propose and validate a novel online, noncontact fault detection method for LED chips utilizing the photovoltaic effect.
- To develop a high-sensitivity instrument capable of detecting various faults in different types and sizes of LED chips.
- To demonstrate the correlation between photovoltaic behavior and LED electroluminescent characteristics for comprehensive quality assessment.
Main Methods:
- Illuminating bonded LED chips on a lead frame to generate a measurable photocurrent via the p-n junction's photovoltaic effect.
- Characterizing the weak photovoltaic response to identify five specific LED faults: chip defects (quality, contamination) and bonding deficiencies (disconnection, debonding, rebonding).
- Developing a specialized instrument with a tunable magnetic core, coil, and detection system to optimize photocurrent measurement for diverse LED chips (color, size 9-15 mil).
Main Results:
- The developed instrument successfully detected various LED faults, including chip defects and bonding issues, in different colored and sized LED chips.
- Experimental results confirmed a direct relationship between the photovoltaic behavior of LED p-n junctions and their electroluminescent characteristics.
- The method allows for the derivation of internal optoelectronic characteristics and external Ohmic contact performance by analyzing the photocurrent.
Conclusions:
- The proposed online noncontact fault detection method based on the photovoltaic effect is effective for identifying critical LED chip faults before packaging.
- The developed high-sensitivity instrument demonstrates the feasibility of this technique on an LED assembly line for diverse chip types.
- This photovoltaic-based approach offers a viable, noncontact alternative to traditional electroluminescence-based online fault detection methods, potentially improving efficiency and reducing damage.
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