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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Field Effect Transistor01:29

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of MOSFET01:17

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Bipolar Junction Transistor

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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Photoelectrical response in single-layer graphene transistors.

Yumeng Shi1, Wenjing Fang, Keke Zhang

  • 1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave., Singapore.

Small (Weinheim an Der Bergstrasse, Germany)
|June 4, 2009
PubMed
Summary

Visible light exposure causes oxygen desorption in single-layer graphene (SLG) transistors, shifting their performance. This study reveals extrinsic mechanisms dominate the photoelectrical response, suggesting new optoelectronic applications for SLG devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Single-layer graphene (SLG) transistors exhibit light-induced performance changes.
  • Understanding the mechanisms behind these changes is crucial for optoelectronic applications.

Purpose of the Study:

  • To investigate the effect of visible light illumination on SLG transistors.
  • To elucidate the dominant mechanisms governing the photoelectrical response in SLG transistors.
  • To explore potential strategies for light detection and optoelectronic applications using SLG.

Main Methods:

  • Fabrication and characterization of single-layer graphene (SLG) transistors.
  • Illumination of SLG transistors with visible light.
  • Analysis of transfer curves and hysteresis under illumination.
  • Investigation of SLG transistors coated with photoactive polymers.

Main Results:

  • Visible light illumination induced a negative shift in SLG transistor transfer curves due to oxygen desorption.
  • Illumination did not affect transistor hysteresis, indicating charge traps are unaffected.
  • Covering SLG transistors with photoactive polymers reduced the photodesorption effect, highlighting extrinsic mechanisms.

Conclusions:

  • The photoelectrical response of SLG transistors is primarily governed by extrinsic mechanisms, not direct photocurrent.
  • Oxygen desorption is a key factor in the light-induced performance shift.
  • SLG's properties offer a promising platform for developing novel light detectors and optoelectronic devices.