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Chemical infiltration during atomic layer deposition: metalation of porphyrins as model substrates
Lianbing Zhang1, Avinash J Patil, Le Li
1Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale, Germany. lianbing@mpi-halle.de
Abstract:
New uses for ALD: By applying standard metal oxide atomic layer deposition (ALD) to two types of porphyrins, site-specific chemical infiltration of substrate molecules is achieved: Diethylzinc can diffuse into the interior of porphyrin supramolecular structures and induce metalation of the porphyrin molecules from the vapor phase. A = Ph, p-HO(3)SC(6)H(4).
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