Related Experiment Video
Updated: Jun 22, 2026

09:10
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
6-W diode-end-pumped Nd:GdVO4/LBO quasi-continuous-wave red laser at 671 nm
Optics Express
|June 5, 2009
Abstract:
We report a high-power diode-end-pumped Q-switched Nd:GdVO4 red laser through intracavity frequency-doubling with a type-I critical phase-matched LBO crystal. The maximum average output power at 671 nm was obtained to be 6 W at the repetition frequency of 47 kHz, with the corresponding optical conversion efficiency of 12.8% and the pulse width of about 97 ns. At the average output power around 5 W, the power stability was better than 5.8% for one hour.
Related Concept Videos
Schottky Barrier Diode
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
The Ideal Diode
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
Diode: Reverse bias
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

