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Ricardo Claps, Varun Raghunathan, Ozdal Boyraz

|June 5, 2009

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Researchers observed Raman emission, amplification, and lasing in silicon-germanium (SiGe) waveguides for the first time. This breakthrough achieved 16dB optical gain and a low lasing threshold, paving the way for novel photonic devices.

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Area of Science:

Optoelectronics
Materials Science
Photonics

Background:

Silicon photonics is limited by its indirect bandgap, hindering light emission and amplification.
Germanium-Silicon (SiGe) alloys offer tunable optoelectronic properties compared to pure silicon.

Purpose of the Study:

To demonstrate spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide.
To characterize the optical gain and lasing threshold in SiGe waveguides.
To investigate the spectral shift of Raman emission in SiGe compared to silicon.

Main Methods:

Fabrication of a Si1-xGex waveguide with x=7.5%.
Pulsed optical pumping to induce Raman emission and amplification.
Spectroscopic analysis of the Raman signal to measure frequency shifts.

Main Results:

Achieved a pulsed optical gain of 16dB in the SiGe waveguide.
Observed a lasing threshold of 25 W peak pulse power (20 mW average).
Measured a 40 GHz frequency downshift in the Raman spectrum compared to silicon.

Conclusions:

The observed spectral shift is attributed to composition- and strain-induced changes in optical phonon frequency.
SiGe waveguides demonstrate significant potential for Raman-based optical amplification and lasing.
Germanium-Silicon-on-Oxide presents a promising platform for flexible Raman gain media in integrated photonics.