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Updated: Jun 22, 2026

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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Sub-100 nm nanostructuring of silicon by ultrashort laser pulses
Optics Express
|June 6, 2009
Abstract:
Techniques based on laser scanning microscopes for nanoprocessing of periodic structures on silicon with ultra-short laser pulses have been developed. Ripples of 800-900 nm spacing were obtained after laser irradiation at a wavelength of 1040 nm, a repetition rate of 10 kHz and a fluence of 2 J/cm2 in air. Smaller features of 70-100nm spacing were achieved in oil at a wavelength of 800 nm, a repetition rate of 90 MHz and a fluence of 200-300 mJ/cm2 by using a high numerical focusing objective.

