1.34-mum efficient laser emission in highly-doped Nd:YAG under 885-nm diode pumping

We report on 1.34-mum laser emission in Nd:YAG under diode pumping at 885 nm, directly into the 4F3/2 emitting level. 3.8 W of output power with 0.26 overall optical-to-optical efficiency was recorded from a 2.5- at.% Nd:YAG single-crystal. Comparative results obtained by classical pumping at 809 nm, in the highly absorbing 4F5/2 level, are presented, showing the advantage of the direct pumping. The influence of lasing wavelength and Nd concentration on the thermal effects induced by optical pumping into the active component is discussed.