All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers.

Area of Science:

• Optoelectronics
• Terahertz (THz) technology
• Semiconductor device physics

Background:

• Continuous-wave (CW) terahertz (THz) generation is crucial for various applications.
• Traditional systems often rely on specific semiconductor materials like low-temperature-grown gallium arsenide (LT-GaAs).
• Developing alternative materials and system architectures can enhance THz generation and detection capabilities.

Purpose of the Study:

• To demonstrate an all-optoelectronic CW THz photomixing system for the first time.
• To utilize low-temperature-grown indium gallium arsenide (LT-InGaAs) for both THz emitters and detectors.
• To evaluate the performance of this LT-InGaAs system and compare it with conventional LT-GaAs photomixers.

Main Methods:

• Fabrication of LT-InGaAs based devices for THz emission and detection.
• Integration of these devices into an all-optoelectronic photomixing system.
• Characterization of the system's performance using fiber-optic excitation wavelengths.
• Comparative analysis against systems employing LT-GaAs photomixers.

Main Results:

• Successful implementation of an all-optoelectronic CW THz photomixing system.
• Demonstration of LT-InGaAs devices functioning effectively as both THz emitters and coherent homodyne detectors.
• Compatibility of the system with standard fiber-optic excitation wavelengths.
• Performance comparison data between LT-InGaAs and LT-GaAs based systems.

Conclusions:

• LT-InGaAs is a viable material for developing integrated optoelectronic THz photomixing systems.
• The demonstrated system offers a promising alternative for CW THz generation and detection.
• Further research can explore optimization and broader applications of LT-InGaAs in THz technology.