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Related Experiment Video

Updated: Jun 22, 2026

Time-resolved Photophysical Characterization of Triplet-harvesting Organic Compounds at an Oxygen-free Environment Using an iCCD Camera
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Analyzing integrated circuits at work with a picosecond time-gated imager.

D Comelli, C D'Andrea, G Valentini

    Optics Express
    |June 9, 2009
    PubMed
    Summary

    This study introduces a picosecond time-gated imager for non-contact testing of complementary metal-oxide-semiconductor (CMOS) circuits. The system captures luminescence during transistor switching, enabling detailed analysis of complex integrated circuits.

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    Area of Science:

    • Electrical Engineering
    • Materials Science
    • Optics

    Background:

    • Non-contact testing of integrated circuits is crucial for performance analysis.
    • Existing methods may lack the temporal and spatial resolution needed for complex circuits.
    • Understanding transistor switching dynamics is key to circuit reliability.

    Purpose of the Study:

    • To propose and demonstrate a novel system for non-contact testing of CMOS circuits.
    • To enable the recording of temporal luminescence evolution during transistor switching.
    • To showcase the system's capability in analyzing complex integrated circuits.

    Main Methods:

    • Development of a system utilizing a picosecond time-gated image intensifier.
    • Recording chip luminescence as a function of position and time.
    • Application of the system to a CMOS inverter chain and a static memory circuit.

    Main Results:

    • The system successfully recorded the temporal evolution of luminescence during transistor switching.
    • The intrinsic spatial parallelism of the imager was highlighted for analyzing wide circuit sections.
    • Demonstrated applicability to complex circuits like microprocessors and random access memories.

    Conclusions:

    • The picosecond time-gated imager is a viable tool for non-contact circuit analysis.
    • The system offers significant advantages for studying simultaneous electrical events in complex integrated circuits.
    • This technology advances the diagnostic capabilities for semiconductor devices.