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Related Experiment Video

Updated: Jun 22, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Electrically driven silicon resonant light emitting device based on slot-waveguide.

Carlos Angulo Barrios, Michal Lipson

    Optics Express
    |June 9, 2009
    PubMed
    Summary
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    Influence of discontinuities on photonic waveguides.

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    This study introduces an all-silicon resonant cavity light emitting device (RCLED) using slotted waveguides. Simulations show a micron-size RCLED operating efficiently at low currents, paving the way for integrated silicon photonics.

    Area of Science:

    • Photonics and optoelectronics
    • Integrated silicon photonics
    • Semiconductor device physics

    Background:

    • Developing efficient light sources on silicon platforms is crucial for integrated photonics.
    • Existing silicon light-emitting devices often face challenges with efficiency and integration.

    Purpose of the Study:

    • To propose and model an all-silicon electrically driven resonant cavity light emitting device (RCLED).
    • To explore the potential of slotted waveguides for creating compact and efficient silicon-based light sources.

    Main Methods:

    • Device design based on Si/SiO2 slot-waveguide with an erbium-doped SiO2 active layer.
    • Modeling of a microring resonator configuration for electrical excitation.
    • Simulation of device performance, including quality factor and bias current requirements.

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    Last Updated: Jun 22, 2026

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    Main Results:

    • A micron-size, electrically driven microring RCLED with a quality factor (Q) of 6,700 was simulated.
    • The device is predicted to operate at a very low bias current of 0.75 nA.
    • The metal-oxide-semiconductor (MOS) configuration enabled efficient electrical excitation.

    Conclusions:

    • The proposed slotted waveguide RCLED demonstrates a promising approach for on-chip light emission in silicon photonics.
    • The device's high Q-factor and low operating current suggest potential for low-power optical interconnects.
    • Further investigation into lasing conditions is warranted for practical device realization.