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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
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Destructive interference effect on surface plasmon resonance in terahertz attenuated total reflection.

Hideki Hirori, Masaya Nagai, Koichiro Tanaka

    Optics Express
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    Summary

    We studied surface plasmon resonance on InAs using terahertz pulses. Interference between reflected and reemitted waves is crucial for understanding resonance, going beyond conventional approximations.

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    Area of Science:

    • Terahertz spectroscopy
    • Condensed matter physics
    • Surface science

    Background:

    • Surface plasmon resonance (SPR) is a phenomenon at the interface of a conductor and a dielectric.
    • Investigating SPR in semiconductors like Indium Arsenide (InAs) can reveal unique electronic properties.
    • Conventional Otto's approximation is often used to describe SPR experiments.

    Purpose of the Study:

    • To investigate surface plasmon resonance (SPR) at the air-n-type (100) InAs interface.
    • To analyze the influence of experimental parameters on SPR characteristics.
    • To explain observed SPR features that deviate from conventional models.

    Main Methods:

    • Utilizing a time-domain attenuated total reflection (TDATR) technique.
    • Employing coherent terahertz pulses for excitation.
    • Conducting experiments in the Otto configuration.

    Main Results:

    • Observed characteristic spectra of attenuated total reflectivity and phase shift due to surface plasmons.
    • Demonstrated strong dependence of SPR frequency and phase jump on wave vector, refractive index, incident angle, and prism-InAs distance.
    • Identified that conventional Otto's approximation is insufficient to explain the observed phenomena.

    Conclusions:

    • The interference between reflected and reemitted electromagnetic waves is a key factor in SPR.
    • A more comprehensive theoretical model is needed to fully describe SPR in this system.
    • This study provides insights into the complex nature of surface plasmons on semiconductor interfaces.