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Updated: Jun 22, 2026

Patterning via Optical Saturable Transitions - Fabrication and Characterization
Published on: December 11, 2014
First modeling of the PDSMZ-type optical-3R gate scheme and its available degree of random-amplitude-noise
Abstract:
We have modeled the semiconductor-optical-amplifier (SOA) - based polarization-discriminating-symmetric-Mach-Zehnder (PDSMZ) - type (i.e., a UNI-type) 3R gating scheme, and have searched for an optimum set of 3R-gating conditions. Primary parts of the optimum parameters we obtained - such as the interferometer delay time Deltat and the widths of input data and clock pulses in the gate model - matched those from previously reported 3R-loop transmission experiments fairly well. We also found that the 3R-gating mechanism which forms the regenerated output signal differs greatly from what it has been thought to be. Based on this model, we have characterized the available degree of random-amplitude-noise suppression.
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