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Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb
B S Passmore1, D G Allen, S R Vangala
1Sandia National Laboratories, Albuquerque, NM 87185, USA. bspassm@sandia.gov
Optics Express
|June 10, 2009
Summary
This study demonstrates doping-tunable mid-infrared extraordinary transmission using indium antimonide (InSb) plasmonic structures. Varying doping levels shifted resonance frequencies, showing potential for tunable mid-infrared devices.
Area of Science:
- Optics and Photonics
- Materials Science
- Semiconductor Physics
Background:
- Extraordinary optical transmission (EOT) through subwavelength structures offers unique light manipulation capabilities.
- Indium antimonide (InSb) is a narrow-bandgap semiconductor with potential for mid-infrared applications.
- Plasmonic structures enable enhanced light-matter interactions in the infrared spectrum.
Purpose of the Study:
- To demonstrate doping-tunable mid-infrared extraordinary transmission.
- To investigate the effect of doping concentration on the resonance frequency of InSb plasmonic structures.
- To explore the suitability of InSb-based plasmonics for tunable mid-infrared devices.
Main Methods:
- Fabrication of a periodic metal hole array patterned on n-type InSb.
- Measurement of polarization-dependent transmission spectra at room temperature and 77 K.
- Analysis of the fundamental resonance shift with varying doping concentrations (1 x 10^16 to 2 x 10^18 cm^-3).
Main Results:
- Observed a significant doping-tunable resonance shift of approximately 123 cm^-1 (1.4 µm).
- Demonstrated polarization-dependent transmission characteristics.
- Achieved good agreement between experimental results and theoretical calculations of transmission resonances.
Conclusions:
- Doping concentration is a critical parameter for tuning the mid-infrared resonance in InSb plasmonic structures.
- The demonstrated InSb-based plasmonic structures show promise for tunable mid-infrared device applications.
- Further research into InSb plasmonics could lead to novel optoelectronic devices.
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