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Updated: Jun 22, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Uncooled 2.5 Gb/s operation of 1.3 mum GaInNAs DQW lasers over a wide temperature range
Abstract:
Ridge waveguide 1.3 mum GaInNAs lasers were fabricated from high quality double quantum well material grown by molecular beam epitaxy. Short cavity (250 mum) lasers have low threshold currents and small temperature dependencies of threshold current and slope efficiency, with a characteristic temperature of the threshold current as high as 200 K. The temperature stability allows for uncooled 2.5 Gb/s operation up to temperatures as high as 110 degrees C with a constant modulation voltage and only the bias current adjusted for constant average output power. Under these conditions, an extinction ratio larger than 6 dB and a spectral rms-width smaller than 2 nm are obtained.
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