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Related Experiment Video

Updated: Jun 22, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Published on: October 13, 2017

A solution-processed 1.53 mum quantum dot laser with temperature-invariant emission wavelength.

S Hoogland, V Sukhovatkin, I Howard

    Optics Express
    |June 12, 2009
    PubMed
    Summary

    Researchers developed a simple solution-processed infrared laser using colloidal quantum dots. This breakthrough enables integration with silicon, offering a low-temperature sensitivity for advanced optical applications.

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    Last Updated: Jun 22, 2026

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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    Published on: October 13, 2017

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    10:41

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    High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

    Published on: June 28, 2016

    Area of Science:

    • Materials Science
    • Optoelectronics
    • Nanotechnology

    Background:

    • Short-wavelength infrared (1-2 µm) light sources are crucial for telecommunications, biomedical diagnostics, and optical sensing.
    • Current semiconductor laser fabrication relies on lattice-matched substrates, hindering integration with silicon.
    • Colloidal quantum dots offer a versatile alternative due to their solution-based processing and substrate compatibility.

    Purpose of the Study:

    • To demonstrate a novel, simple fabrication method for infrared lasers using colloidal quantum dots.
    • To achieve laser emission at 1.53 µm compatible with silicon integration.
    • To investigate the temperature sensitivity of the fabricated colloidal quantum dot laser.

    Main Methods:

    • Fabrication of a whispering gallery mode laser by coating a glass capillary with a colloidal suspension of semiconductor quantum dots.
    • Development of procedures for creating a smooth, low-scattering-loss quantum dot film within the capillary.
    • Characterization of the laser's performance, including threshold behavior and temperature-dependent wavelength shift.

    Main Results:

    • Successful fabrication of a 1.53 µm infrared laser using a simple dipping process with colloidal quantum dots.
    • Demonstration of a whispering gallery mode laser with a well-defined threshold.
    • Achieved the lowest reported temperature-sensitivity of lasing wavelength (dλmax/dT = 0.03 nm/K) in a colloidal quantum dot system, significantly lower than traditional semiconductor quantum wells.

    Conclusions:

    • Solution processing of colloidal quantum dots provides a viable and simple route to fabricate infrared lasers.
    • This approach overcomes silicon integration limitations associated with traditional epitaxial growth methods.
    • The demonstrated low temperature sensitivity of the colloidal quantum dot laser is highly promising for advanced optical sensing and telecommunication applications.