Related Experiment Video
Updated: Jun 22, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Self-phase-modulation in submicron silicon-on-insulator photonic wires
Abstract:
We measure the transmission of ps-pulses through silicon-on-insulator submicron waveguides for excitation wavelengths between 1400 and 1650 nm and peak powers covering four orders of magnitude. Self-phase-modulation induced spectral broadening is found to be significant at coupled peak powers of even a few tens of mW. The nonlinear-index coefficient, extracted from the experimental data, is estimated as n(2) ~ 5*10(-18) m(2)/W at 1500 nm. The experimental results show good agreement with model calculations that take into account nonlinear phase shift, first- and second order dispersion, mode confinement, frequency dispersion of n(2), and dynamics of two-photon-absorption-generated free carriers. Comparison with theory indicates that an observed twofold increase of spectral broadening between 1400 and 1650 nm can be assigned to the dispersion of n(2) as well as first order- rather than second-order dispersion effects. The analysis of pulse broadening, spectral shift and transmission saturation allows estimating a power threshold for nonlinearity-induced signal impairment in nanophotonic devices.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

