1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm

Area of Science:

• Optics and Photonics
• Materials Science
• Semiconductor Physics

Background:

• Semiconductor lasers are crucial for various applications.
• Developing high-power lasers at longer wavelengths (2-micrometer range) presents challenges.
• Vertical External Cavity Surface Emitting Lasers (VECSELs) offer potential for high power and beam quality.

Purpose of the Study:

• To report a high-power optically pumped semiconductor VECSEL operating at a 2-micrometer wavelength.
• To demonstrate the potential of antimonide-based materials for VECSEL fabrication.

Main Methods:

• Fabrication of a VECSEL using 15 GaInSb quantum wells within a GaSb cavity.
• Growth on an AlAsSb/GaSb Bragg reflector.
• Integration of a diamond heat spreader for thermal management.
• Optical pumping and characterization of the laser performance at 5 degrees C.

Main Results:

• Achieved 1 W of optical output power.
• Operated at a 2-micrometer wavelength.
• Produced a nearly diffraction-limited Gaussian beam.
• Demonstrated successful thermal management using a diamond heat spreader.

Conclusions:

• Antimonide-based materials show high potential for VECSEL fabrication.
• The developed VECSEL demonstrates high power and excellent beam quality at 2-micrometers.
• This work paves the way for VECSELs in demanding applications requiring 2-micrometer emission.