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1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm.

A Härkönen, M Guina, O Okhotnikov

    Optics Express
    |June 12, 2009
    PubMed
    Summary

    We developed a high-power semiconductor laser emitting at 2-micrometers. This Vertical External Cavity Surface Emitting Laser (VECSEL) achieved 1W output power, showing antimonide potential for advanced laser applications.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Semiconductor Physics

    Background:

    • Semiconductor lasers are crucial for various applications.
    • Developing high-power lasers at longer wavelengths (2-micrometer range) presents challenges.
    • Vertical External Cavity Surface Emitting Lasers (VECSELs) offer potential for high power and beam quality.

    Purpose of the Study:

    • To report a high-power optically pumped semiconductor VECSEL operating at a 2-micrometer wavelength.
    • To demonstrate the potential of antimonide-based materials for VECSEL fabrication.

    Main Methods:

    • Fabrication of a VECSEL using 15 GaInSb quantum wells within a GaSb cavity.
    • Growth on an AlAsSb/GaSb Bragg reflector.
    • Integration of a diamond heat spreader for thermal management.
    • Optical pumping and characterization of the laser performance at 5 degrees C.

    Main Results:

    • Achieved 1 W of optical output power.
    • Operated at a 2-micrometer wavelength.
    • Produced a nearly diffraction-limited Gaussian beam.
    • Demonstrated successful thermal management using a diamond heat spreader.

    Conclusions:

    • Antimonide-based materials show high potential for VECSEL fabrication.
    • The developed VECSEL demonstrates high power and excellent beam quality at 2-micrometers.
    • This work paves the way for VECSELs in demanding applications requiring 2-micrometer emission.