Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Evidence for Atomic-Scale Vibron-Mediated Electron Bunching.

Physical review letters·2026
Same author

Fast and Continuous Detection of Single Microwave Photons via Photoassisted Quasiparticle Tunneling to a Superconducting Island.

Physical review letters·2026
Same author

Analysis of progression-free and overall survival in ovarian cancer: Bevacizumab treatment outcomes using historical cohort.

Die Pharmazie·2024
Same author

Hund's coupling mediated multi-channel quantum phase transition of a single magnetic impurity in Fe(Se, Te).

Nature communications·2024
Same author

Efficient Microwave Photon-to-Electron Conversion in a High-Impedance Quantum Circuit.

Physical review letters·2024
Same author

Signature of anyonic statistics in the integer quantum Hall regime.

Nature communications·2024

Related Experiment Video

Updated: Jun 22, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Phase dynamics of ferromagnetic Josephson junctions.

I Petković1, M Aprili

  • 1Laboratoire de Physique des Solides, UMR 8502, Bâtiment 510, Université Paris-Sud, 91405 Orsay Cedex, France. petkovic@lps.u-psud.fr

Physical Review Letters
|June 13, 2009
PubMed
Summary

We studied ferromagnetic Josephson junctions and found no extra spin noise. Incomplete energy relaxation caused dynamical phase bifurcation, leading to premature switching.

Area of Science:

  • Condensed matter physics
  • Quantum electronics
  • Spintronics

Background:

  • Underdamped ferromagnetic Josephson junctions exhibit complex classical phase dynamics.
  • Understanding these dynamics is crucial for quantum device applications.

Purpose of the Study:

  • Investigate the classical phase dynamics of underdamped ferromagnetic Josephson junctions.
  • Characterize the role of spin noise and energy relaxation.
  • Measure the phase relaxation time (τ_phi).

Main Methods:

  • Measurements of switching probability in stationary and nonstationary regimes down to 350 mK.
  • Pump-probe experiments varying junction current bias frequency.
  • Direct measurement of phase relaxation time (τ_phi) via switching distribution evolution.

More Related Videos

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
08:55

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Published on: June 7, 2018

Related Experiment Videos

Last Updated: Jun 22, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
09:01

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

Published on: April 16, 2017

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
08:55

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Published on: June 7, 2018

  • Numerical simulations for comparison with experimental data.

    • Main Results:

    • Escape temperature equals bath temperature, indicating no additional spin noise.
    • Incomplete energy relaxation observed in the nonstationary regime.
    • Dynamical phase bifurcation demonstrated, leading to premature switching and bimodal switching distributions.
    • Phase relaxation time (τ_phi) directly measured and consistent with simulations.

    Conclusions:

    • Ferromagnetic Josephson junctions do not exhibit additional spin noise at low temperatures.
    • Dynamical phase bifurcation is a key phenomenon in nonstationary regimes due to incomplete energy relaxation.
    • The measured phase relaxation time (τ_phi) provides crucial insights into junction dynamics.