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Boosting electronic transport in carbon nanotubes by isotopic disorder
Niels Vandecasteele1, Michele Lazzeri, Francesco Mauri
1IMPMC, Universités Paris 6 et 7, CNRS, IPGP, 140 rue de Lourmel, 75015 Paris, France.
Abstract:
The current-voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by 13C isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential resistance. This is an extraordinary case where disorder improves the electronic transport.
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