Related Experiment Video
Updated: Jun 22, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Observation of lower to higher bandgap transition of one-dimensional defect modes
Xiaosheng Wang1, Jack Young, Zhigang Chen
1Department of Physics and Astronomy, San Francisco State University, CA 94132, USA.
Abstract:
We demonstrate one-dimensional optically-induced photonic lattices with a negative defect and observe linear bandgap guidance in such a defect. We show that a defect mode moves from the first bandgap to a higher bandgap as the lattice potential is increased. Our experimental results are in good agreement with the theoretical analysis of these effects.
Related Concept Videos
UV–Vis Spectroscopy: Molecular Electronic Transitions
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Imperfections in Crystal Structure: Non-Stoichiometric Defects
