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Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 22, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Feedback induced instabilities in a quantum dot semiconductor laser.

Olwen Carroll, Ian O'Driscoll, Stephen P Hegarty

    Optics Express
    |June 17, 2009
    PubMed
    Summary
    This summary is machine-generated.

    GaAs quantum dot lasers exhibit temperature-dependent behavior. Higher temperatures lead to instabilities and chaos under optical feedback, unlike quantum well lasers.

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    Related Experiment Videos

    Last Updated: Jun 22, 2026

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
    12:57

    Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

    Published on: October 13, 2017

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
    15:47

    Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    Published on: November 1, 2013

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Area of Science:

    • Semiconductor physics
    • Laser technology
    • Quantum optics

    Background:

    • Gallium arsenide (GaAs) based quantum dot (QD) semiconductor lasers are crucial for optical communications.
    • Understanding their dynamic behavior under optical feedback is essential for device stability.
    • Quantum well (QW) lasers serve as a benchmark for comparison.

    Purpose of the Study:

    • To analyze the properties of GaAs-based QD lasers emitting near 1310 nm.
    • To investigate the temperature dependence of the line-width enhancement factor (LEF).
    • To study the impact of optical feedback on laser dynamics at different temperatures.

    Main Methods:

    • Experimental analysis of GaAs-based QD semiconductor lasers.
    • Measurement of the line-width enhancement factor (LEF) at varying device temperatures (20°C to 50°C).
    • Application of optical feedback from a distant reflector to observe dynamic responses.

    Main Results:

    • The LEF of QD lasers increases significantly with temperature, from 1.5 at 20°C to 5 at 50°C.
    • At 20°C, QD lasers with optical feedback remained stable.
    • At 50°C, QD lasers exhibited instabilities like power drop-outs and pulsations, leading to chaos.

    Conclusions:

    • Device temperature strongly influences the LEF and stability of GaAs QD lasers.
    • QD lasers demonstrate a unique and clear route to chaos under optical feedback.
    • These dynamical features distinguish QD lasers from QW lasers, which are more prone to instability.