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III-V semiconductor nanowire growth: does arsenic diffuse through the metal nanoparticle catalyst?
L H G Tizei1, T Chiaramonte, D Ugarte
1Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas-UNICAMP, C P 6165,13083-970 Campinas, SP, Brazil. ltizei@ifi.unicamp.br
Nanotechnology
|June 18, 2009
Summary
Researchers investigated how group V atoms are incorporated into III-V semiconductor nanowires (NWs). They discovered a pathway where these atoms diffuse through the catalytic nanoparticle, influencing NW growth modes.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- III-V semiconductor nanowires (NWs) are synthesized using catalytic metal nanoparticles (NPs).
- The precise incorporation mechanisms of group V atoms into these NWs are not fully understood.
Purpose of the Study:
- To elucidate the incorporation pathways of group V atoms in III-V semiconductor NWs.
- To analyze the catalyst NP structure and chemistry during heterostructured NW growth.
Main Methods:
- Detailed structural and chemical analysis of catalyst NPs in heterostructured InP/InAs/InP NWs.
- Investigation of NW growth behavior across a narrow temperature range.
Main Results:
- Identified a group V atom diffusion pathway through the catalytic NP via a stable arsenic-containing phase.
- Observed distinct NW growth mode transitions (VLS to VSS) within a 30°C temperature range.
Conclusions:
- Group V atoms can diffuse through the catalytic NP, forming intermediate phases.
- Catalyst NP behavior is critical in determining NW growth modes and heterostructure formation.
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