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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Substrate-induced magnetism in epitaxial graphene buffer layers.

A Ramasubramaniam¹, N V Medhekar, V B Shenoy

¹Program in Applied and Computational Mathematics, Princeton University, Princeton, NJ 08544, USA. aramasub@princeton.edu

|June 18, 2009

Summary

Intrinsic magnetism is observed in graphene buffer layers on SiC(0001) due to chemical bonding with the substrate. This discovery offers a new way to engineer magnetism in epitaxial graphene for spintronic applications.

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Area of Science:

Condensed Matter Physics
Materials Science

Background:

Graphene's magnetism is of fundamental and technological interest, with potential in molecular magnets and spintronics.
Previous studies showed defects and adsorbates induce magnetism in freestanding graphene, but control is challenging.

Purpose of the Study:

To investigate intrinsic magnetism in graphene buffer layers on SiC(0001).
To explore the role of graphene-substrate chemical bonds in magnetism.
To understand how adatom density influences magnetism in epitaxial graphene.

Main Methods:

First-principles calculations were employed to study graphene buffer layers on SiC(0001).
The study considered both bulk-terminated and adatom-terminated SiC(0001) surfaces.
Analysis focused on the disruption of graphene pi-bonds and localization of states near the Fermi level.

Main Results:

Graphene buffer layers on SiC(0001) exhibit intrinsic magnetism.
Formation of chemical bonds between graphene and SiC disrupts pi-bonds, localizing states near the Fermi level.
Exchange interactions between these localized states drive itinerant magnetism.

Conclusions:

Epitaxial graphene on SiC(0001) can possess intrinsic magnetism.
Adatom density on the SiC substrate significantly affects spin distribution in the graphene buffer layer.
This provides a method for engineering magnetism in epitaxial graphene for technological applications.