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Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 22, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators.

Qianfan Xu, Sasikanth Manipatruni, Brad Schmidt

    Optics Express
    |June 18, 2009
    PubMed
    Summary
    This summary is machine-generated.

    Researchers demonstrate a high-speed silicon electro-optical modulator for faster data transmission. This compact device achieves 12.5 Gbit/s modulation using a silicon micro-ring modulator.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Carrier-injection silicon electro-optical modulators are crucial for optical communication systems.
    • Optimizing these modulators for high speed, small size, and high modulation depth is an ongoing challenge.

    Purpose of the Study:

    • To present a novel scheme for high-speed operation of carrier-injection silicon electro-optical modulators.
    • To optimize the device for compact size and high modulation depth.

    Main Methods:

    • Theoretical analysis of the modulator's performance.
    • Experimental demonstration using a silicon micro-ring modulator.

    Main Results:

    • Achieved high-speed operation.
    • Demonstrated 12.5 Gbit/s modulation.
    • Obtained a high extinction ratio greater than 9 dB.

    Conclusions:

    • The proposed scheme enables high-speed modulation in silicon electro-optical devices.
    • The silicon micro-ring modulator is a viable platform for achieving efficient and fast optical modulation.