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Updated: Jun 22, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Abstract:
We report a new variation of the conventional Z-scan method to characterize the third-order optical nonlinearity of photonic materials. By exploiting the combination of the eclipse Z-scan with a thermal nonlinearity management technique, we demonstrate an improvement in sensitivity and flexibility of the method to simultaneously characterize the thermal and nonthermal nonlinearity of optical materials. The method is demonstrated by measuring the nonlinear refractive index in CS(2), SiO(2) and H(2)O, standard materials, and also in a biomaterial, the amino acid Tryptophan in water solution, using a femtosecond Ti-Sapphire laser operating at 76MHz repetition rate.
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