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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

Junction Potentials in Galvanic Cells

Junction Potentials in Galvanic Cells

The Nernst equation, derived under the assumption of thermodynamic equilibrium, calculates the electromotive force (emf) as the sum of potential differences at phase boundaries in a reversible cell without a liquid junction. However, in irreversible cells such as the Daniell cell, an additional potential difference named the liquid-junction potential (EJ) arises across the interface of two electrolyte solutions due to different ion diffusion rates. This EJ represents the potential difference...

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Related Experiment Video

Updated: Jun 22, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

The dynamic organic p-n junction.

Piotr Matyba¹, Klara Maturova, Martijn Kemerink

¹The Organic Photonics and Electronics Group, Department of Physics, Umeå University, SE-901 87 Umeå, Sweden.

Nature Materials

|June 23, 2009

Summary

Researchers created a dynamic organic p-n junction using electrochemistry in light-emitting electrochemical cells (LECs). This breakthrough proves electrochemical doping in LECs and offers insights into organic electronics.

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Last Updated: Jun 22, 2026

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

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Published on: November 5, 2014

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Published on: June 23, 2018

Area of Science:

Organic electronics
Semiconductor physics
Electrochemistry

Background:

Static p-n junctions are fundamental to inorganic semiconductor devices.
Organic semiconductors offer potential for flexible and low-cost electronics.
Light-emitting electrochemical cells (LECs) are a type of organic electronic device.

Purpose of the Study:

To demonstrate the in situ formation of a dynamic p-n junction in an organic semiconductor.
To investigate the electrochemical doping process within LECs.
To study the kinetics and electronic properties of the dynamic organic p-n junction.

Main Methods:

Utilized scanning Kelvin probe microscopy and optical probing.
Employed planar light-emitting electrochemical cells (LECs) with a conjugated polymer and electrolyte.
Analyzed potential drop distribution and light emission zones.

Main Results:

Successfully formed a dynamic p-n junction structure in situ within an organic semiconductor.
Identified a distinct light-emission zone located significantly from the negative electrode, indicating electrochemical doping.
Characterized the doping formation and dissipation kinetics, revealing details about the organic p-n junction's electronic structure and stability.

Conclusions:

Electrochemical doping is proven to occur in light-emitting electrochemical cells (LECs).
The study provides valuable insights into the electronic structure and stability of dynamic organic p-n junctions.
Findings pave the way for future advancements in dynamic organic p-n junction-based devices.