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Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

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Published on: November 9, 2015

A hybrid CO(2) laser processing for silicon etching.

C K Chung, M Y Wu

|June 24, 2009

Summary

This summary is machine-generated.

A new glass-assisted carbon dioxide (CO(2)) laser method enables silicon etching, overcoming previous absorption challenges. This technique modifies silicon

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Area of Science:

Materials Science
Laser Processing
Semiconductor Fabrication

Background:

Conventional silicon etching methods include wet, dry, Nd:YAG, and UV laser processes.
Carbon dioxide (CO(2)) lasers have not been utilized for silicon etching due to significant absorption issues.
A novel approach is needed to overcome the limitations of existing silicon etching techniques.

Purpose of the Study:

To demonstrate a novel method for etching silicon (Si) using carbon dioxide (CO(2)) laser processing.
To investigate the mechanism behind successful Si etching with CO(2) laser assistance.
To explore the influence of glass assistance on Si's optical and thermal properties during laser processing.

Main Methods:

Utilized a carbon dioxide (CO(2)) laser for silicon etching.
Employed glass positioned beneath the silicon substrate to assist the etching process.
Analyzed the changes in electronic band structure, surface oxidation, and light absorption of silicon at high temperatures.

Main Results:

Successfully demonstrated silicon etching using a CO(2) laser with glass assistance.
The presence of glass beneath the silicon altered its light absorption characteristics.
Etching proceeded from the top surface towards the silicon-glass interface.

Conclusions:

Glass-assisted CO(2) laser processing is a viable novel method for silicon etching.
The mechanism involves modified light absorption and thermal properties of silicon at high temperatures.
This technique offers a new pathway for silicon micromachining and fabrication.