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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

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Related Experiment Video

Updated: Jun 22, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

All-optical regeneration on a silicon chip.

Reza Salem, Mark A Foster, Amy C Turner

    Optics Express
    |June 24, 2009
    PubMed
    Summary

    This study shows a new silicon device for optical 2R regeneration. It uses nonlinear spectral broadening and filtering for high-speed telecommunication data rates.

    Area of Science:

    • Photonics
    • Optical communications
    • Materials science

    Background:

    • Optical signal regeneration is crucial for maintaining signal integrity in high-speed fiber optic networks.
    • Existing regeneration techniques can be complex and costly.
    • Integrated silicon photonics offers a promising platform for compact and efficient optical devices.

    Purpose of the Study:

    • To demonstrate all-optical 2R regeneration using an integrated silicon device.
    • To investigate the underlying nonlinear optical processes.
    • To assess the device's suitability for telecommunication data rates.

    Main Methods:

    • Fabrication of an integrated silicon device comprising an 8-mm nanowaveguide and a ring-resonator bandpass filter.
    • Characterization of the nonlinear power transfer function.

    More Related Videos

    Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
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    Published on: February 11, 2020

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Related Experiment Videos

    Last Updated: Jun 22, 2026

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
    08:02

    Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

    Published on: February 11, 2020

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

  • Measurement of output pulse width and analysis of spectral broadening and filtering effects.
  • Numerical modeling including free-carrier effects.

    • Main Results:

    • Successful demonstration of optical 2R regeneration.
    • Measured operating peak power of 6 W.
    • Output pulse width found to be solely dependent on the filter's bandwidth.
    • Numerical modeling confirms potential for telecommunication data rates.

    Conclusions:

    • The integrated silicon device effectively performs optical 2R regeneration.
    • The device leverages nonlinear spectral broadening and filtering for signal restoration.
    • This technology holds potential for future high-speed optical communication systems.